In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly…

Despite recent progress in materials synthesis, there are few materials with narrow pore size distributions and well-defined pore structures in the size range of 100 - 500 A. Materials with pores of 100 - 500 A possess a potential combination…