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Trilayer Graphene Nanoribbon Field Effect Transistor Analytical Model
Rahmani, Meisam; Faculty of Electrical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor, Malaysia - Ismail, Razali; Faculty of Electrical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor, Malaysia - Ahmadi, Mohammad Taghi; Nanotechnology Research Center Nanoelectronic Group, Physics Department, Urmia University, 57147 Urmia, Iran - Rahmani, Komeil; Department of Electrical, Computer and Biomedical Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran - Pourasl, Ali H.; Faculty of Electrical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor, Malaysia
| Formato: |
info:eu-repo/semantics/article, info:eu-repo/semantics/publishedVersion |
| Enlaces: |
 
The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, low energy delay production, and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and…
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| Fecha: |
2014-04-01 |
| Recurso: |
TELKOMNIKA: Indonesian journal of electrical engineering |
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