Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults ~SFs! in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act…

Recent works by our group on hexagonal and cubic GaN/AlN quantum dots grown by molecular beam epitaxy are reviewed. It is shown that the growth of GaN on AlN can occur either in a layerby-
layer mode to form quantum…