|
1.
|
Structural properties of undoped and doped cubic GaN grown on SiC(001)
Martínez-Guerrero, Esteban - Bellet-Amalric, E. - Martinet, L. - Feuillet, G. - Daudin, B.
| Formato: |
Article |
| Enlaces: |
 
Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults ~SFs! in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act…
|
| Fecha: |
2013-06-14 |
| Recurso: |
Instituto Tecnológico y de Estudios Superiores de Occidente - México |
|
