| Título: | Using of the Modern Semiconductor Devices Based on the SiC |
| Autores: | Drabek, Pavel |
| Fecha: | 2011-06-17 |
| Publicador: | Advances in Electrical and Electronic Engineering |
| Fuente: |
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| Tipo: |
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| Tema: | Semiconductor devices; SiC; MOSFET. |
| Descripción: | This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors). |
| Idioma: | Inglés |
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