Título: Epitaxial Layers of InP Doped With Rare Elements for Use in Radiation Detector
Autores: Kozak, Halyna
Sopko, Bruno
Zdansky, Karel
Fecha: 2011-06-20
Publicador: Advances in Electrical and Electronic Engineering
Fuente:
Tipo:

Tema: LPE growth process; InP layers; detector structure.
Descripción: We have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.
Idioma: Inglés

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