| Título: | ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING |
| Autores: |
Mehmet KASAP Selim ACAR Bora ALKAN |
| Fecha: | 2010-08-18 |
| Publicador: | Gazi University Journal of Science |
| Fuente: |
 |
| Tipo: | Peer-reviewed Article |
| Tema: | Hall mobility, dislocation scattering, Kubo formula |
| Descripción: | To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment. Key Words: Hall mobility, dislocation scattering, Kubo formula |
| Idioma: | Inglés |