| Título: | Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods |
| Autores: |
Pisecny, Pavol Stuchlikova, Lubica Harmatha, Ladislav Tapajna, Milan Csabay, Otto |
| Fecha: | 2011-07-07 |
| Publicador: | Advances in Electrical and Electronic Engineering |
| Fuente: |
 |
| Tipo: |
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| Tema: | Energy; MOS; radiation; structures. |
| Descripción: | The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects. |
| Idioma: | Inglés |
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