Título: Stimulated Emission from InAs (GaAs) Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region
Autores: Pudis, Dusan
Kovac, Jaroslav
Kovac, Jaroslav
Jakabovic, Jan
Vincze, Andrej
Gottschalch, Sieler
Benndorf, Gabriele
Rheinländer, Bernd
Schwabe, Reinhard
Fecha: 2011-06-29
Publicador: Advances in Electrical and Electronic Engineering
Fuente:
Tipo:

Tema: Stimulated emission; stimulated emission; electroluminescence spectra.
Descripción: Our study is focused on the optical and electronic properties of InAs (GaAs) monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (GaAs)/Al0.33GA0.67As revealed the excellent emission spectra in the visib le range 630-690 nm. The stimulated emission from these structures across their cleavage planes has been observed at low  temperatures what is highly interesting for potential device applications.
Idioma: Inglés

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