| Título: |
Lattice and Micro-Strains in Polycrystalline Silicon Films Deposited on Ceramic Substrates Lattice and Micro-Strains in Polycrystalline Silicon Films Deposited on Ceramic Substrates |
| Autores: |
Jackuliak, Quido Sutta, Pavol |
| Fecha: | 2011-06-29 |
| Publicador: | Advances in Electrical and Electronic Engineering |
| Fuente: |
 |
| Tipo: |
|
| Tema: |
Silicon film; SiAlON; deposition; temperature. Silicon film; SiAlON; deposition; temperature. |
| Descripción: |
X-ray diffraction analysis indicated that the all silicon films are polycrystalline. The preferred orientation of silicon films deposited on SiAlON is almost i [110] direction perpendicular to substrate, whereas the preferred orientation of the silicon films deposited on mullite and alumina is in [111] direction. The crystalline sizes reach from several hundreds of nanometers in Si films on alumin a to several micrometers in Si films on mullite. The crystallite sizes SiAlON in Si films on depending on deposition temperature and crystallographic orientation. The lattice stress decreasing with increasing deposition deposition temperature was observed in Si films on SIAlON, whereas the compressive lattice stress was observed in Si films deposited on mullite and alumina substrates. The probability of stacking faults of 0, 010 was observed only in direction [111] in Si film on alumina deposited at 1100°C. X-ray diffraction analysis indicated that the all silicon films are polycrystalline. The preferred orientation of silicon films deposited on SiAlON is almost i [110] direction perpendicular to substrate, whereas the preferred orientation of the silicon films deposited on mullite and alumina is in [111] direction. The crystalline sizes reach from several hundreds of nanometers in Si films on alumin a to several micrometers in Si films on mullite. The crystallite sizes SiAlON in Si films on depending on deposition temperature and crystallographic orientation. The lattice stress decreasing with increasing deposition deposition temperature was observed in Si films on SIAlON, whereas the compressive lattice stress was observed in Si films deposited on mullite and alumina substrates. The probability of stacking faults of 0, 010 was observed only in direction [111] in Si film on alumina deposited at 1100°C. |
| Idioma: | sk |
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