| Título: | IEEE Journal of the Electron Devices Society |
| Autores: | |
| Fecha: | 2014-10-23 |
| Publicador: | Directory of Open Access Journals - DOAJ |
| Fuente: |
 |
| Tipo: | journal |
| Tema: |
field effect transistors Indium gallium arsenide logic gates Silicon tunneling LCC:Electrical engineering. Electronics. Nuclear engineering LCC:TK1-9971 |
| Descripción: | |
| Idioma: | EN |
1 | 6 |
2 | 7 |
3 | 8 |
4 | 9 |
5 | 10 |