| Título: | Power-Gating Scheme and Modeling of Near-Threshold Adiabatic Flip-Flops |
| Autores: |
Zang, Fangfang; Ningbo University Hu, Jianping; Ningbo University Cheng, Wei; Ningbo University |
| Fecha: | 2013-07-22 |
| Publicador: | TELKOMNIKA: Indonesian journal of electrical engineering |
| Fuente: |
 |
| Tipo: |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| Tema: |
Electronics; nanometer circuits; modeling near-threshold computing, adiabatic computing, power-gating scheme, energy-efficient designs, nanometer circuits |
| Descripción: | Technology scaling increases the density and performance of nanometer circuits, resulting in both large dynamic and leakage dissipations. This paper presents power-gating scheme, modeling, and optimization of adiabatic flip-flops operating on near-threshold regions to reduce both dynamic and leakage dissipations. The power-gated logic blocks are realized with complementary pass-transistor adiabatic logic with the dual threshold technique to reduce active leakage dissipations. The improved complementary pass-transistor adiabatic logic circuits are used as the two-phase power-gating switches to reduce the sleep leakage dissipations. The analytical model for power-gating adiabatic sequential circuits was constructed, and the energy overhead of the proposed power-gating scheme was analyzed in detail. Near-threshold computing for a power-gating adiabatic mode-10 counter was verified. The results show that the proposed power-gating technique is suitable for the adiabatic units operating on near-threshold regions. |
| Idioma: | Inglés |