Título: 0.18μm CMOS Low Voltage Power Amplifier For WSN Application
Autores: Chenjian, Wu; Southeast University
Zhiqun, Li; Southeast University
Nan, Yao; Southeast University
Meng, Zhang; Southeast University
Liang, Chen; Southeast University
Jia, Cao; Southeast University
Fecha: 2013-08-01
Publicador: TELKOMNIKA: Indonesian journal of electrical engineering
Fuente:
Tipo: info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Tema: No aplica
Descripción: This paper presents the design of a Class A/B power amplifier (PA) for 2.4-2.4835GHz Wireless Sensor Network (WSN) system in 0.18μm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. Seven different level of output power can be obtained through a three- bit control code. The tested results shows that the proposed PA achieves power added efficiency (PAE) of 26.73% while delivering an output power of 6.35dBm at 1dB compression point. Its power gain is 15.87dB. With a low DC voltage supply of 1V, its power consumption is 15.3mW. The PA die size is 1070×610μm2.
Idioma: Inglés